Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

= 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ('Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Max. Units Conditions V VGS = 250µA V/°C Reference 1mA 0.022 VGS 4.1A 0.030 VGS 3.5A V VDS = VGS, 250µA S VDS 4.1A 1.0 VDS = 16V, VGS µA 25 VDS = 16V, VGS °C 100 VGS nA -100 VGS 5.1 nC VDS 16V 20 VGS = 4.5V, See Fig. 6 and 12 VDD = 2.4, See Fig. 10

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Conditions D MOSFET symbol 3.1 showing the A G integral reverse 35 p-n junction diode. = 2.0A, VGS 63 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

ST2600C24R0L : 2000V 2220A Phase Control SCR in a A-36 (R-Puk) Package

IRS2130DSPBF : 3-phase Bridge Driver

AFL27003R3DY/ES : Advanced Analog HIGH Reliability Hybrid Dc/dc Converters

IRG4RC10STRRPBF : Medium Voltage 600-1199 Volts 600V DC-1 KHZ (Standard) Discrete Igbt in a D-pak Package

AFL27028SW/HB : 2-OUTPUT 66 W DC-DC REG PWR SUPPLY MODULE Specifications: Output Voltage: 28 volts ; Input Voltage: 270 volts ; Output Power: 66 watts (0.0885 HP) ; Operating Temperature: -20 to 85 C (-4 to 185 F)

AFL2814DW/ES : 2-OUTPUT 100 W DC-DC REG PWR SUPPLY MODULE Specifications: Output Voltage: 14.7 to 15.3 volts ; Input Voltage: 16 to 40 volts ; Output Power: 100 watts (0.1340 HP) ; Operating Temperature: -25 to 85 C (-13 to 185 F)

AHP288SW : 1-OUTPUT 80 W DC-DC REG PWR SUPPLY MODULE Specifications: Package Type: Other, HERMETIC SEALED, CERAMIC, CASE W, 12 PIN ; Output Voltage: 7.92 to 8.08 volts ; Input Voltage: 16 to 40 volts ; Output Power: 80 watts (0.1072 HP) ; Operating Temperature: -20 to 85 C (-4 to 185 F)

IRKD236/16PBF : 230 A, 400 V, SILICON, RECTIFIER DIODE Specifications: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, High Voltage ; IF: 230000 mA ; Package: POWER, INT-A-PAK-3 ; Pin Count: 3 ; Number of Diodes: 2

JANSH2N7480U3 : 8 A, 100 V, 0.185 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.1850 ohms ; Package Type: HERMETIC SEALED, LCC-18 ; Number of units in IC: 1

OMR9802SFP : 5 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, MSFM5 Specifications: Regulator Type: Low Dropout ; Output Polarity: Positive ; Output Voltage Type: Fixed ; Package Type: Other, TO-258AA, MO-078AA, 5 PIN ; Life Cycle Stage: ACTIVE ; Output Voltage: 4.75 to 5.25 volts ; IOUT: 3 amps ; VIN: 5.4 to 6.5 volts ; Dropout Voltage: 0.4000 volts

BUK9Y40-55B : N-channel Trenchmos (tm) Logic Level Fet N-channel Enhancement Mode Field-effect Power Transistor in a Plastic Package Using Philips High-performance Automotive (HPA) Trenchmostm Technology. Very Low On-state Resistance Q101 Compliant 175 Cel Rated Logic Level Compatible. Applications Automotive Systems 12 V And 24 V Loads Motors, Lamps And Solenoids.

C783CA : Style = Phase Control ;; Type = Disc/hockey Puk ;; Voltage = 3100V ;; Current = 1800A ;; Circuit Configuration = Single.

CEP6030AL : N-channel Logic Level Enhancement Mode Field Effect Transistor.

DDTC113ZCA : Prebiased Transistors. 50V; 100mA NPN Pre-biased Small Signal Surface Mount Transistor.

JAN1N823 : TC Reference Voltage Zener: (do35).

LT1161C : Quad Protected High-side MOSFET Driver. The is a quad high-side gate driver allowing the use of low cost N-channel power MOSFETs for high-side switching applications. It has four independent switch channels, each containing a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components. Also included in each switch channel is a drain sense.

SMBR1060 : Wafer. Schottky Wafer, 10A 60V 102mil Superlowir. General : A ( Super Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @10 Amperes, Ta=25°C @16 Amperes, 25°C Maximum Instantaneous Reverse Voltage VR= 60 Volt, Ta=25°C Maximum Junction Capacitance 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive.

CN34-H-120-008 : 2 ELEMENT, 1600 uH, COMMON MODE CHOKE. s: Devices in Package: 2 ; Lead Style: PRINTED WIRING PIN ; Application: Common Mode Choke ; Inductance Range: 1600 microH ; DCR: 0.4500 ohms ; Rated DC Current: 2000 milliamps.

FBI4A5M1-4 : 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 150000 mA ; RoHS Compliant: RoHS ; Package: PLASTIC PACKAGE-4 ; Pin Count: 4 ; Number of Diodes: 1.

FN4A3Q-A : 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: SC-59, 3 PIN.

HU20010R : 200 A, 100 V, SILICON, RECTIFIER DIODE. s: Package: ROHS COMPLIANT PACKAGE-1 ; Number of Diodes: 1 ; VRRM: 100 volts ; IF: 200000 mA ; trr: 0.1000 ns.

ILSB1206ER2R7K : 1 ELEMENT, 2.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Application: General Purpose, RF Choke ; Inductance Range: 2.7 microH ; Rated DC Current:.

SI1912EDH-E3 : 1130 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.2800 ohms ; Package Type: SC-70, 6 PIN ; Number of units in IC: 2.

TX1299NLT : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).

10A01-AP : 10 A, 50 V, SILICON, RECTIFIER DIODE. s: Package: ROHS COMPLIANT, PLASTIC, R-6, 2 PIN ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 10000 mA ; RoHS Compliant: RoHS.

308500N750150 : CAP,CERAMIC,15PF,500VDC,N750 TC CODE,-120,120PPM TC. s: Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition.

671-7857 : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer.